FCP125N65S3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FCP125N65S3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 181 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET FCP125N65S3

FCP125N65S3 Datasheet (PDF)

..1. Size:378K onsemi
fcp125n65s3.pdf

FCP125N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 24 A, 125 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 125 mW @ 10 V 24 Acharge performance. This advanc

..2. Size:259K inchange semiconductor
fcp125n65s3.pdf

isc N-Channel MOSFET Transistor FCP125N65S3FEATURESDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 125m(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch-Mode and Resonant-Mode Power SuppliesDC-DC ConvertersAC and DC Mot

0.1. Size:385K onsemi
fcp125n65s3r0.pdf

FCP125N65S3R0MOSFET Power, N-Channel,SUPERFET) III, Easy Drive650 V, 24 A, 125 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailo

4.1. Size:245K inchange semiconductor
fcp125n65s.pdf

isc N-Channel MOSFET Transistor FCP125N65SFEATURESStatic drain-source on-resistance:RDS(on) 2.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applicationsABSOLUTE MAXIMUM RATI

6.1. Size:771K 1
fcp125n60e.pdf

November 2015FCP125N60EN-Channel SuperFET II Easy-Drive MOSFET600 V, 29 A, 125 mFeatures Description 650 V @TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 102 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 7

6.2. Size:813K onsemi
fcp125n60e.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

6.3. Size:257K inchange semiconductor
fcp125n60e.pdf

isc N-Channel MOSFET Transistor FCP125N60EFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Liste

Recientemente añadidas las descripciónes de los transistores: