FCP125N65S3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP125N65S3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 181 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 40 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FCP125N65S3 MOSFET
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FCP125N65S3 datasheet
fcp125n65s3.pdf
FCP125N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 125 mW @ 10 V 24 A charge performance. This advanc
fcp125n65s3.pdf
isc N-Channel MOSFET Transistor FCP125N65S3 FEATURES Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 125m (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters AC and DC Mot
fcp125n65s3r0.pdf
FCP125N65S3R0 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 24 A, 125 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailo
fcp125n65s.pdf
isc N-Channel MOSFET Transistor FCP125N65S FEATURES Static drain-source on-resistance RDS(on) 2.3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications ABSOLUTE MAXIMUM RATI
Otros transistores... DSK9J01 , DSKTJ04 , DSKTJ05 , DSKTJ07 , DSKTJ08 , 2SK3591 , 36N06 , 65N06 , IRFP250 , FKI10300 , FMH08N80E , FQU10N20 , IPA180N10N3 , IPA60R120P7 , IPB048N15N5LF , IPD031N06L3 , IPD033N06N .
History: TPC8020-H
History: TPC8020-H
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