IPA60R120P7 Todos los transistores

 ..1. Size:1102K  infineon
 ipa60r120p7.pdf

IPA60R120P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET

 ..2. Size:239K  inchange semiconductor
 ipa60r120p7.pdf

isc N-Channel MOSFET Transistor IPA60R120P7 FEATURES Drain-source on-resistance RDS(on) 0.12 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 5.1. Size:1139K  infineon
 ipa60r120c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPA60R120C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPA60R120C7 TO-220 FP 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

 5.2. Size:201K  inchange semiconductor
 ipa60r120c7.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R120C7 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 6.1. Size:557K  infineon
 ipa60r125cp.pdf

IPA60R125CP C IMOS $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 1j max 650 V !0 V 4DGA9L>9 7 HI / >C 1, #JAAE6@ DS on Y 0.125 DS(on) max j V 2 AIG6 ADL IN V . J6A>;> 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

 6.2. Size:1105K  infineon
 ipa60r125cfd7.pdf

IPA60R125CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such

 6.3. Size:2729K  infineon
 ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 6.4. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

 6.5. Size:2788K  infineon
 ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R125P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R125P6, IPP60R125P6, IPA60R125P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 6.6. Size:201K  inchange semiconductor
 ipa60r125cp.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R125CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 6.7. Size:205K  inchange semiconductor
 ipa60r125c6.pdf

 6.8. Size:245K  inchange semiconductor
 ipa60r125p6.pdf

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6 FEATURES Drain-source on-resistance RDS(on) 0.125 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION It is intended for general purpose switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )