Справочник MOSFET. IPA60R120P7

 

IPA60R120P7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPA60R120P7
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 26 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для IPA60R120P7

 

 

IPA60R120P7 Datasheet (PDF)

 ..1. Size:1102K  infineon
ipa60r120p7.pdf

IPA60R120P7
IPA60R120P7

IPA60R120P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

 ..2. Size:239K  inchange semiconductor
ipa60r120p7.pdf

IPA60R120P7
IPA60R120P7

isc N-Channel MOSFET Transistor IPA60R120P7FEATURES Drain-source on-resistance:RDS(on) 0.12Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 5.1. Size:1139K  infineon
ipa60r120c7.pdf

IPA60R120P7
IPA60R120P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R120C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 5.2. Size:201K  inchange semiconductor
ipa60r120c7.pdf

IPA60R120P7
IPA60R120P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R120C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.1. Size:557K  infineon
ipa60r125cp.pdf

IPA60R120P7
IPA60R120P7

IPA60R125CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@DS on Y 0.125 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

 6.2. Size:1105K  infineon
ipa60r125cfd7.pdf

IPA60R120P7
IPA60R120P7

IPA60R125CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

 6.3. Size:2729K  infineon
ipa60r125p6 ipp60r125p6 ipw60r125p6.pdf

IPA60R120P7
IPA60R120P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 6.4. Size:1257K  infineon
ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

IPA60R120P7
IPA60R120P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

 6.5. Size:2788K  infineon
ipw60r125p6 ipp60r125p6 ipa60r125p6.pdf

IPA60R120P7
IPA60R120P7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

 6.6. Size:201K  inchange semiconductor
ipa60r125cp.pdf

IPA60R120P7
IPA60R120P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

 6.7. Size:205K  inchange semiconductor
ipa60r125c6.pdf

IPA60R120P7
IPA60R120P7

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

 6.8. Size:245K  inchange semiconductor
ipa60r125p6.pdf

IPA60R120P7
IPA60R120P7

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6FEATURESDrain-source on-resistance:RDS(on) 0.125 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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