IPD050N10N5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD050N10N5
Código: 050N10N5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 VQgⓘ - Carga de la puerta: 51 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 560 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD050N10N5
IPD050N10N5 Datasheet (PDF)
ipd050n10n5.pdf
IPD050N10N5MOSFETD-PAKOptiMOSTM5 Power-Transistor, 100 VFeatures N-channel, normal leveltab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature1 2 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application3 Ideal for high-frequency switching and synchronous
ipd050n10n5.pdf
isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5FEATURESStatic drain-source on-resistance:RDS(on)5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100
ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf
Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on
ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf
Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
ipd050n03lg.pdf
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ipd050n03lg2.pdf
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ipd050n03l.pdf
isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03LFEATURESStatic drain-source on-resistance:RDS(on)5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918