Справочник MOSFET. IPD050N10N5

 

IPD050N10N5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPD050N10N5
   Маркировка: 050N10N5
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 51 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 560 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для IPD050N10N5

 

 

IPD050N10N5 Datasheet (PDF)

 ..1. Size:966K  infineon
 ipd050n10n5.pdf

IPD050N10N5 IPD050N10N5

IPD050N10N5MOSFETD-PAKOptiMOSTM5 Power-Transistor, 100 VFeatures N-channel, normal leveltab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 175 C operating temperature1 2 Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application3 Ideal for high-frequency switching and synchronous

 ..2. Size:242K  inchange semiconductor
 ipd050n10n5.pdf

IPD050N10N5 IPD050N10N5

isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5FEATURESStatic drain-source on-resistance:RDS(on)5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

 7.1. Size:1000K  infineon
 ipd050n03lg ipf050n03lg ips050n03lg ipu050n03lg ipd050n03l ips050n03l.pdf

IPD050N10N5 IPD050N10N5

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5 mW Optimized technology for DC/DC convertersID 50 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on

 7.2. Size:630K  infineon
 ipd050n03l ipf050n03l ips050n03l ipu050n03l.pdf

IPD050N10N5 IPD050N10N5

Type IPD050N03L G IPF050N03L GIPS050N03L G IPU050N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low

 7.3. Size:1220K  infineon
 ipd050n03lg.pdf

IPD050N10N5 IPD050N10N5

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@EType

 7.4. Size:1221K  infineon
 ipd050n03lg2.pdf

IPD050N10N5 IPD050N10N5

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@EType

 7.5. Size:241K  inchange semiconductor
 ipd050n03l.pdf

IPD050N10N5 IPD050N10N5

isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03LFEATURESStatic drain-source on-resistance:RDS(on)5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV Ga

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