IPD079N06L3 Todos los transistores

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 ipd079n06l3.pdf

isc N-Channel MOSFET Transistor IPD079N06L3 IIPD079N06L3 FEATURES Static drain-source on-resistance RDS(on) 7.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

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 ipd079n06l3g.pdf

IPD079N06L3G www.VBsemi.tw N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) 60 Package with Low Thermal Resistance RDS(on) ( ) at VGS = 10 V 0.0063 100 % Rg and UIS Tested RDS(on) ( ) at VGS = 4.5 V 0.0120 ID (A) 97 Configuration Single D TO-252 G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25

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 ipd075n03l ipf075n03l ips075n03l ipu075n03l.pdf

Type IPD075N03L G IPF075N03L G IPS075N03L G IPU075N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 7.5 m DS(on),max Optimized technology for DC/DC converters I 50 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very l

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 ipd075n03l.pdf

isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03L FEATURES Static drain-source on-resistance RDS(on) 7.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V