IPD079N06L3
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPD079N06L3
Marking Code: 079N06L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 79
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 26
nS
Cossⓘ -
Output Capacitance: 690
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0079
Ohm
Package:
TO-252
IPD079N06L3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPD079N06L3
Datasheet (PDF)
..1. Size:448K infineon
ipd079n06l3 ipd079n06l3g.pdf 
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..2. Size:243K inchange semiconductor
ipd079n06l3.pdf
isc N-Channel MOSFET Transistor IPD079N06L3IIPD079N06L3FEATURESStatic drain-source on-resistance:RDS(on)7.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
0.1. Size:854K cn vbsemi
ipd079n06l3g.pdf
IPD079N06L3Gwww.VBsemi.twN-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) 60 Package with Low Thermal ResistanceRDS(on) () at VGS = 10 V 0.0063 100 % Rg and UIS TestedRDS(on) () at VGS = 4.5 V 0.0120ID (A) 97Configuration SingleDTO-252GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25
9.3. Size:1175K infineon
ipd075n03lg 1.pdf
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9.4. Size:1175K infineon
ipd075n03lg .pdf
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9.5. Size:555K infineon
ipd075n03l ipf075n03l ips075n03l ipu075n03l.pdf
Type IPD075N03L G IPF075N03L GIPS075N03L G IPU075N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 7.5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very l
9.6. Size:241K inchange semiconductor
ipd075n03l.pdf
isc N-Channel MOSFET Transistor IPD075N03L, IIPD075N03LFEATURESStatic drain-source on-resistance:RDS(on)7.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV
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