IPD127N06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD127N06L
Código: 127N06L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 136 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 410 pF
Resistencia entre drenaje y fuente RDS(on): 0.0127 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD127N06L
IPD127N06L Datasheet (PDF)
ipd127n06l.pdf
isc N-Channel MOSFET Transistor IPD127N06L,IIPD127N06LFEATURESStatic drain-source on-resistance:RDS(on)12.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV
ipd127n06lg.pdf
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ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf
IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC
ipb12cne8n-g ipd12cne8n-g ipi12cne8n-g ipp12cne8n-g.pdf
IPB12CNE8N G IPD12CNE8N GIPI12CNE8N G IPP12CNE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1
ipd122n10n3g.pdf
IPD122N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 12.2 mW Excellent gate charge x R product (FOM)DS(on)ID 59 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-fre
ipd122n10n3.pdf
isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3FEATURESStatic drain-source on-resistance:RDS(on)12.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 1
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