All MOSFET. IPD127N06L Datasheet

 

IPD127N06L Datasheet and Replacement


   Type Designator: IPD127N06L
   Marking Code: 127N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 52 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0127 Ohm
   Package: TO-252
 

 IPD127N06L substitution

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IPD127N06L Datasheet (PDF)

 ..1. Size:241K  inchange semiconductor
ipd127n06l.pdf pdf_icon

IPD127N06L

isc N-Channel MOSFET Transistor IPD127N06L,IIPD127N06LFEATURESStatic drain-source on-resistance:RDS(on)12.7mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV

 0.1. Size:1000K  infineon
ipd127n06lg.pdf pdf_icon

IPD127N06L

% # ! % (>.;?6?@%>EFeaturesD P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 1 7mWD n) m xP ( 381>>581>35=5>C

 9.1. Size:858K  infineon
ipb12cn10ng ipd12cn10ng ipi12cn10ng ipp12cn10ng ipb12cn10ng ipi12cn10ng.pdf pdf_icon

IPD127N06L

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO252) 12.4 mW Excellent gate charge x R product (FOM)DS(on)ID 67 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 9.2. Size:623K  infineon
ipb12cn10n-g ipd12cn10n-g ipi12cn10n-g ipp12cn10n-g.pdf pdf_icon

IPD127N06L

IPB12CN10N G IPD12CN10N GIPI12CN10N G IPP12CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR (TO252) 12.4mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 67 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

Datasheet: IPD068N10N3 , IPD068P03L3 , IPD079N06L3 , IPD082N10N3 , IPD088N06N3 , IPD096N08N3 , IPD110N12N3 , IPD122N10N3 , STP65NF06 , IPD135N08N3 , IPD16CN10N , IPD180N10N3 , IPD200N15N3 , IPD220N06L3 , IPD25CN10N , IPD320N20N3 , IPD33CN10N .

History: IRF9610PBF | AP9578GH | SSF11NS60UF

Keywords - IPD127N06L MOSFET datasheet

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 IPD127N06L equivalent finder
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