IPD135N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD135N08N3
Código: 135N08N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 79 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 45 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 35 nS
Conductancia de drenaje-sustrato (Cd): 353 pF
Resistencia entre drenaje y fuente RDS(on): 0.0135 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD135N08N3
IPD135N08N3 Datasheet (PDF)
ipd135n08n3.pdf
isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3FEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8
ipd135n08n3g.pdf
IPD135N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switchingRDS(on),max 13.5 mW Optimized technology for DC/DC convertersID 45 A Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target
ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very
ipd135n03l.pdf
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ipd135n03l.pdf
isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03LFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
