IPD135N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD135N08N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 353 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD135N08N3
IPD135N08N3 Datasheet (PDF)
ipd135n08n3.pdf
isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3FEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8
ipd135n08n3g.pdf
IPD135N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switchingRDS(on),max 13.5 mW Optimized technology for DC/DC convertersID 45 A Excellent gate charge x R product (FOM)DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target
ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf
Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very
ipd135n03l.pdf
pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI
ipd135n03lg.pdf
pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD R 3DE DH;E5:;@9 ') - . 8AC -'*- 1 m D n) m xR ) BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CDD1)R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ( 5:3@@7> >A9;5 >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ) ' D n)R 07CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 C3E76R *4 8C77 B>3E;@9 , A"- 5A?B>;3@ETy
ipd135n03lg ipf135n03lg ips135n03lg ipu135n03lg.pdf
pe % # ! % # ! %' # ! %) # ! % (>.;?6?@%>EFeaturesD S !4EF EI
ipd135n03l.pdf
isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03LFEATURESStatic drain-source on-resistance:RDS(on)13.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 30 VDSSV
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918