IPD135N08N3 PDF and Equivalents Search

 ..1. Size:439K  infineon
 ipd135n08n3.pdf

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 ..2. Size:243K  inchange semiconductor
 ipd135n08n3.pdf

isc N-Channel MOSFET Transistor IPD135N08N3,IIPD135N08N3 FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8... See More ⇒

 0.1. Size:354K  infineon
 ipd135n08n3g.pdf

IPD135N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching RDS(on),max 13.5 mW Optimized technology for DC/DC converters ID 45 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target... See More ⇒

 6.1. Size:537K  infineon
 ipd135n03l ipf135n03l ips135n03l ipu135n03l.pdf

Type IPD135N03L G IPF135N03L G IPS135N03L G IPU135N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 13.5 m DS(on),max Optimized technology for DC/DC converters I 30 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very ... See More ⇒

 6.2. Size:1393K  infineon
 ipd135n03l.pdf

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 6.3. Size:1378K  infineon
 ipd135n03lg.pdf

pe % # ! % # ! %' # ! %) # ! % (>.;?6?@ %>E Features D R 3DE DH;E5 ;@9 ') - . 8AC -'*- 1 m D n) m x R ) BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD D 1) R + F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ( 5 3@@7> >A9;5 >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ) ' D n) R 07CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 C3E76 R *4 8C77 B>3E;@9 , A"- 5A?B>;3@E Ty... See More ⇒

 6.4. Size:1397K  infineon
 ipd135n03lg ipf135n03lg ips135n03lg ipu135n03lg.pdf

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 6.5. Size:241K  inchange semiconductor
 ipd135n03l.pdf

isc N-Channel MOSFET Transistor IPD135N03L, IIPD135N03L FEATURES Static drain-source on-resistance RDS(on) 13.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V... See More ⇒