IPD350N06L Todos los transistores

 ..1. Size:242K  inchange semiconductor
 ipd350n06l.pdf

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06L FEATURES Static drain-source on-resistance RDS(on) 35m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

 0.1. Size:1008K  infineon
 ipd350n06lg.pdf

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 9.1. Size:177K  infineon
 ipd35n10s3l-26 ipd35n10s3l-26 ds 1 1.pdf

IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 26 mW DS(on),max I 35 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Ma

 9.2. Size:392K  infineon
 ipd35n12s3l-24.pdf

IPD35N12S3L-24 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 24 mW ID 35 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ

 9.3. Size:311K  inchange semiconductor
 ipd35n10s3l-26.pdf

isc N-Channel MOSFET Transistor IPD35N10S3L-26 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MA