IPD350N06L - описание и поиск аналогов

isc N-Channel MOSFET Transistor IPD350N06L,IIPD350N06L FEATURES Static drain-source on-resistance RDS(on) 35m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> mW D n) m x P ( 381>>581>35=5>C

IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 26 mW DS(on),max I 35 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Ma

IPD35N12S3L-24 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 24 mW ID 35 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ

isc N-Channel MOSFET Transistor IPD35N10S3L-26 FEATURES Drain Current I = 35A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MA