IPD400N06N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD400N06N Datasheet (PDF)

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isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

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ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf pdf_icon

IPD40N03S4L-08OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 8.3mWDS(on),maxI 40 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD40N03S4L-08 PG-TO252-3-11 4N03L08M

9.2. Size:885K infineon
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IPD40DP06NMMOSFETD-PAKOptiMOSTM Power Transistor, -60 VFeaturestab P-Channel Very low on-resistance RDS(on) 100% avalanche tested Normal Level Enhancement mode1 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21Product validationFully qualified according to JEDEC for Industrial ApplicationsDraintabTable 1 Ke

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