IPD400N06N - аналоги, параметры транзистора - Справочник транзисторов

IPD400N06N даташит

..1. Size:241K inchange semiconductor
ipd400n06n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

0.1. Size:992K infineon
ipd400n06ng.pdf pdf_icon

$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 4 mW D n) m x O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?

9.1. Size:239K infineon
ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf pdf_icon

IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 8.3 mW DS(on),max I 40 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD40N03S4L-08 PG-TO252-3-11 4N03L08 M

9.2. Size:885K infineon
ipd40dp06nm.pdf pdf_icon

IPD40DP06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke

Другие MOSFET... IPD16CN10N , IPD180N10N3 , IPD200N15N3 , IPD220N06L3 , IPD25CN10N , IPD320N20N3 , IPD33CN10N , IPD350N06L , AOD4184A , IPD530N15N3 , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S .