IPD530N15N3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPD530N15N3 datasheet

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isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3 FEATURES Static drain-source on-resistance RDS(on) 53m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150

0.1. Size:983K infineon
ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf pdf_icon

# ! ! # ! ! # ! ! ## ! ! TM # A0A= 2?E #2=@86? !C66 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH

0.2. Size:961K infineon
ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf pdf_icon

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 150 V N-channel, normal level RDS(on),max 53 mW Excellent gate charge x R product (FOM) DS(on) ID 21 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to

Otros transistores... IPD180N10N3 , IPD200N15N3 , IPD220N06L3 , IPD25CN10N , IPD320N20N3 , IPD33CN10N , IPD350N06L , IPD400N06N , AO4407A , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S , IPD60R360P7 .