All MOSFET. IPD530N15N3 Datasheet

 

IPD530N15N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPD530N15N3
   Marking Code: 530N15N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 8.7 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO-252

 IPD530N15N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPD530N15N3 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
 ipd530n15n3.pdf

IPD530N15N3 IPD530N15N3

isc N-Channel MOSFET Transistor IPD530N15N3,IIPD530N15N3FEATURESStatic drain-source on-resistance:RDS(on)53mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh frequency switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150

 0.1. Size:983K  infineon
 ipb530n15n3 ipb530n15n3g ipi530n15n3g ipd530n15n3g ipp530n15n3g.pdf

IPD530N15N3 IPD530N15N3

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 0.2. Size:961K  infineon
 ipb530n15n3g ipd530n15n3g ipi530n15n3g ipp530n15n3g.pdf

IPD530N15N3 IPD530N15N3

IPB530N15N3 G IPD530N15N3 GIPI530N15N3 G IPP530N15N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 53 mW Excellent gate charge x R product (FOM)DS(on)ID 21 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen Free Qualified according to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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