IPD60R3K4CE Todos los transistores

 ..1. Size:1375K  infineon
 ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CE MOSFET DPAK IPAK IPAK SL 600V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive a

 ..2. Size:242K  inchange semiconductor
 ipd60r3k4ce.pdf

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CE FEATURES Static drain-source on-resistance RDS(on) 3.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

 6.1. Size:958K  infineon
 ipd60r3k3c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPD60R3K3C6 Data Sheet Rev. 2.3 Final Industrial & Multimarket +

 6.2. Size:1347K  infineon
 ipd60r3k3c6 2.0.pdf

MOSFET +

 6.3. Size:242K  inchange semiconductor
 ipd60r3k3c6.pdf

isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6 FEATURES Static drain-source on-resistance RDS(on) 3.3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V