IPD60R3K4CE Todos los transistores

 

IPD60R3K4CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD60R3K4CE
   Código: 60S3K4CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 29 W
   Voltaje máximo drenador - fuente |Vds|: 600 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2.6 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 4.6 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 9 pF
   Resistencia entre drenaje y fuente RDS(on): 3.4 Ohm
   Paquete / Cubierta: TO-252

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IPD60R3K4CE Datasheet (PDF)

 ..1. Size:1375K  infineon
ipd60r3k4ce ipu60r3k4ce ips60r3k4ce.pdf

IPD60R3K4CE
IPD60R3K4CE

IPD60R3K4CE, IPU60R3K4CE, IPS60R3K4CEMOSFETDPAK IPAK IPAK SL600V CoolMOS CE Power TransistortabtabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 11233price-performance optimized platform enabling to target cost sensitivea

 ..2. Size:242K  inchange semiconductor
ipd60r3k4ce.pdf

IPD60R3K4CE
IPD60R3K4CE

isc N-Channel MOSFET Transistor IPD60R3K4CE,IIPD60R3K4CEFEATURESStatic drain-source on-resistance:RDS(on)3.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 6.1. Size:958K  infineon
ipd60r3k3c6.pdf

IPD60R3K4CE
IPD60R3K4CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPD60R3K3C6Data SheetRev. 2.3FinalIndustrial & Multimarket +

 6.2. Size:1347K  infineon
ipd60r3k3c6 2.0.pdf

IPD60R3K4CE
IPD60R3K4CE

MOSFET+

 6.3. Size:242K  inchange semiconductor
ipd60r3k3c6.pdf

IPD60R3K4CE
IPD60R3K4CE

isc N-Channel MOSFET Transistor IPD60R3K3C6,IIPD60R3K3C6FEATURESStatic drain-source on-resistance:RDS(on)3.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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