IPD640N06L Todos los transistores

 ..1. Size:993K  infineon
 ipd640n06lg ipd640n06l g.pdf

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 ..2. Size:241K  inchange semiconductor
 ipd640n06l.pdf

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L FEATURES Static drain-source on-resistance RDS(on) 64m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

 0.1. Size:769K  cn vbsemi
 ipd640n06lg.pdf

IPD640N06LG www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

 9.1. Size:781K  1
 ipd64cn10ng ipu64cn10ng.pdf

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