IPD640N06L - параметры транзистора MOSFET, его аналоги, datasheet

IPD640N06L Datasheet (PDF)

..1. Size:993K infineon
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..2. Size:241K inchange semiconductor
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isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06LFEATURESStatic drain-source on-resistance:RDS(on)64mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 60 VDSSV Ga

0.1. Size:769K cn vbsemi
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IPD640N06LGwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

9.1. Size:781K 1
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Другие MOSFET... IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S , IPD60R360P7 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IRF640 , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IPD70R1K4CE , IPD70R2K0CE , IPD70R600CE , IPD70R950CE .