IPD65R1K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD65R1K0CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 68 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET IPD65R1K0CE

IPD65R1K0CE Datasheet (PDF)

..1. Size:963K infineon
ipd65r1k0ce.pdf

IPD65R1K0CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

..2. Size:242K inchange semiconductor
ipd65r1k0ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

6.1. Size:1133K infineon
ipd65r1k4cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDData SheetRev. 2.0Rev. 2.1, 2013-07-31FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjuncti

6.2. Size:1724K infineon
ipd65r1k4c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R1K4C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

6.3. Size:940K infineon
ipd65r1k5ce.pdf

IPD65R1K5CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

6.4. Size:242K inchange semiconductor
ipd65r1k4cfd.pdf

isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFDFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

6.5. Size:242K inchange semiconductor
ipd65r1k4c6.pdf

isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

6.6. Size:242K inchange semiconductor
ipd65r1k5ce.pdf

isc N-Channel MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CEFEATURESStatic drain-source on-resistance:RDS(on)1.5Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

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