All MOSFET. IPD65R1K0CE Datasheet

 

IPD65R1K0CE Datasheet and Replacement


   Type Designator: IPD65R1K0CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-252
 

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IPD65R1K0CE Datasheet (PDF)

 ..1. Size:963K  infineon
 ipd65r1k0ce.pdf pdf_icon

IPD65R1K0CE

IPD65R1K0CEMOSFETDPAK650V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 ..2. Size:242K  inchange semiconductor
 ipd65r1k0ce.pdf pdf_icon

IPD65R1K0CE

isc N-Channel MOSFET Transistor IPD65R1K0CE,IIPD65R1K0CEFEATURESStatic drain-source on-resistance:RDS(on)1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 6.1. Size:1133K  infineon
 ipd65r1k4cfd.pdf pdf_icon

IPD65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDData SheetRev. 2.0Rev. 2.1, 2013-07-31FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjuncti

 6.2. Size:1724K  infineon
 ipd65r1k4c6.pdf pdf_icon

IPD65R1K0CE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R1K4C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

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Datasheet: IPD60R280P7 , IPD60R280P7S , IPD60R360P7 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IPD640N06L , IRFZ44 , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IPD70R1K4CE , IPD70R2K0CE , IPD70R600CE , IPD70R950CE , IPD78CN10N .

History: WMN12N100C2 | OSG55R092HF

Keywords - IPD65R1K0CE MOSFET datasheet

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