IPD65R1K0CE MOSFET Datasheet: N-Ch, 650V, 7.2A. Full specification with pinout and replacement list

IPD65R1K0CE Specs and Replacement

Type Designator: IPD65R1K0CE

Marking Code: 65S1K0CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V

Qg ⓘ - Total Gate Charge: 15.3 nC

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-252

IPD65R1K0CE substitution

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IPD65R1K0CE datasheet

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