IPD70R1K4CE Todos los transistores

 

IPD70R1K4CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD70R1K4CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.9 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-252
 

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IPD70R1K4CE Datasheet (PDF)

 ..1. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPD70R1K4CE

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

 ..2. Size:243K  inchange semiconductor
 ipd70r1k4ce.pdf pdf_icon

IPD70R1K4CE

isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 5.1. Size:1003K  infineon
 ipd70r1k4p7s.pdf pdf_icon

IPD70R1K4CE

IPD70R1K4P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.1. Size:1202K  1
 ipd70r900p7s.pdf pdf_icon

IPD70R1K4CE

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

MOSTRAR MÁS

Otros transistores... IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IRF640N , IPD70R2K0CE , IPD70R600CE , IPD70R950CE , IPD78CN10N , IPP023N04N , IPP039N04L , IPP041N04N , IPP041N12N3 .

History: RU20P4C6 | SIZ346DT | 2N7002TE | SSF8521 | NID9N05BCL | TMD2N60H | TK8A50D

 

 
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