IPD70R1K4CE Specs and Replacement
Type Designator: IPD70R1K4CE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.9 nS
Cossⓘ -
Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-252
- MOSFET ⓘ Cross-Reference Search
IPD70R1K4CE datasheet
..1. Size:1056K infineon
ipd70r1k4ce ips70r1k4ce.pdf 
IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh... See More ⇒
..2. Size:243K inchange semiconductor
ipd70r1k4ce.pdf 
isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
5.1. Size:1003K infineon
ipd70r1k4p7s.pdf 
IPD70R1K4P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒
8.1. Size:1202K 1
ipd70r900p7s.pdf 
IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒
8.2. Size:982K infineon
ipd70r600ce.pdf 
IPD70R600CE MOSFET DPAK 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒
8.3. Size:1188K infineon
ipd70r360p7s.pdf 
IPD70R360P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒
8.4. Size:1202K infineon
ipd70r900p7s.pdf 
IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒
8.5. Size:992K infineon
ipd70r600p7s.pdf 
IPD70R600P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒
8.6. Size:1320K infineon
ipi70r950ce ipd70r950ce ips70r950ce.pdf 
IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I PAK DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati... See More ⇒
8.7. Size:949K infineon
ipd70r2k0ce.pdf 
IPD70R2K0CE MOSFET DPAK 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒
8.8. Size:242K inchange semiconductor
ipd70r950ce.pdf 
isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.9. Size:242K inchange semiconductor
ipd70r600ce.pdf 
isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.10. Size:242K inchange semiconductor
ipd70r2k0ce.pdf 
isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CE FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
Detailed specifications: IPD60R3K4CE, IPD60R600P7, IPD60R600P7S, IPD640N06L, IPD65R1K0CE, IPD65R1K5CE, IPD65R400CE, IPD65R650CE, IRFB4110, IPD70R2K0CE, IPD70R600CE, IPD70R950CE, IPD78CN10N, IPP023N04N, IPP039N04L, IPP041N04N, IPP041N12N3
Keywords - IPD70R1K4CE MOSFET specs
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