IPD70R2K0CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD70R2K0CE
Código: 70S2K0CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 42 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 7.8 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 14 pF
Resistencia entre drenaje y fuente RDS(on): 2 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IPD70R2K0CE
IPD70R2K0CE Datasheet (PDF)
ipd70r2k0ce.pdf
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ipd70r2k0ce.pdf
isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
ipd70r900p7s.pdf
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ipd70r1k4p7s.pdf
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ipd70r600ce.pdf
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ipd70r900p7s.pdf
IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV
ipd70r600p7s.pdf
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ipd70r950ce.pdf
isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CEFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd70r600ce.pdf
isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CEFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipd70r1k4ce.pdf
isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CEFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
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