All MOSFET. IPD70R2K0CE Datasheet

 

IPD70R2K0CE Datasheet and Replacement


   Type Designator: IPD70R2K0CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: TO-252
 
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IPD70R2K0CE Datasheet (PDF)

 ..1. Size:949K  infineon
 ipd70r2k0ce.pdf pdf_icon

IPD70R2K0CE

IPD70R2K0CEMOSFETDPAK700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 ..2. Size:242K  inchange semiconductor
 ipd70r2k0ce.pdf pdf_icon

IPD70R2K0CE

isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CEFEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.1. Size:1202K  1
 ipd70r900p7s.pdf pdf_icon

IPD70R2K0CE

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.2. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPD70R2K0CE

IPD70R1K4CE, IPS70R1K4CEMOSFETDPAK IPAK SL700V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

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Datasheet: IPD60R600P7 , IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IPD70R1K4CE , IRF630 , IPD70R600CE , IPD70R950CE , IPD78CN10N , IPP023N04N , IPP039N04L , IPP041N04N , IPP041N12N3 , IPP048N12N3 .

History: IXFR180N06

Keywords - IPD70R2K0CE MOSFET datasheet

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