IPD70R600CE Todos los transistores

 

IPD70R600CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD70R600CE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 32 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO-252
 

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IPD70R600CE Datasheet (PDF)

 ..1. Size:982K  infineon
 ipd70r600ce.pdf pdf_icon

IPD70R600CE

IPD70R600CEMOSFETDPAK700V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting high

 ..2. Size:242K  inchange semiconductor
 ipd70r600ce.pdf pdf_icon

IPD70R600CE

isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CEFEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 5.1. Size:992K  infineon
 ipd70r600p7s.pdf pdf_icon

IPD70R600CE

IPD70R600P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

 8.1. Size:1202K  1
 ipd70r900p7s.pdf pdf_icon

IPD70R600CE

IPD70R900P7SMOSFETDPAK700V CoolMOS P7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS P7 is an optimized platform tailored to target costsensitive applications in consumer markets such as charger, adapter,lighting, TV

MOSTRAR MÁS

Otros transistores... IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE , IPD65R650CE , IPD70R1K4CE , IPD70R2K0CE , 10N60 , IPD70R950CE , IPD78CN10N , IPP023N04N , IPP039N04L , IPP041N04N , IPP041N12N3 , IPP048N12N3 , IPP051N15N5 .

History: IRF9393 | IRFR4104

 

 
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