IPD70R600CE PDF and Equivalents Search

 

IPD70R600CE Specs and Replacement

Type Designator: IPD70R600CE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 86 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 32 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-252

IPD70R600CE substitution

- MOSFET ⓘ Cross-Reference Search

 

IPD70R600CE datasheet

 ..1. Size:982K  infineon
ipd70r600ce.pdf pdf_icon

IPD70R600CE

IPD70R600CE MOSFET DPAK 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 ..2. Size:242K  inchange semiconductor
ipd70r600ce.pdf pdf_icon

IPD70R600CE

isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 5.1. Size:992K  infineon
ipd70r600p7s.pdf pdf_icon

IPD70R600CE

IPD70R600P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

 8.1. Size:1202K  1
ipd70r900p7s.pdf pdf_icon

IPD70R600CE

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV... See More ⇒

Detailed specifications: IPD60R600P7S, IPD640N06L, IPD65R1K0CE, IPD65R1K5CE, IPD65R400CE, IPD65R650CE, IPD70R1K4CE, IPD70R2K0CE, IRFP260N, IPD70R950CE, IPD78CN10N, IPP023N04N, IPP039N04L, IPP041N04N, IPP041N12N3, IPP048N12N3, IPP051N15N5

Keywords - IPD70R600CE MOSFET specs

 IPD70R600CE cross reference

 IPD70R600CE equivalent finder

 IPD70R600CE pdf lookup

 IPD70R600CE substitution

 IPD70R600CE replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.