IPD78CN10N Todos los transistores

IPB80CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G IPU78CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified accordi

IPD78CN10N www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % UIS tested 0.055 at VGS = 10 V 25 0.057 at VGS = 4.5 V 100 25 21nC 0.070 at VGS = 2.5 V 18 APPLICATIONS Primary side switch D TO-252 G G D S S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unl

isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10N FEATURES Static drain-source on-resistance RDS(on) 78m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features V 100 V DS N-channel, normal level R 78 m DS(on),max (TO252) Excellent gate charge x R product (FOM) DS(on) I 13 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS 2 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max (TO252) 78 mW Excellent gate charge x R product (FOM) DS(on) ID 13 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)