IPP039N04L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP039N04L datasheet

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ipp039n04l.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04L FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T

0.1. Size:264K infineon
ipp039n04lg ipb039n04lg.pdf pdf_icon

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

0.2. Size:344K infineon
ipb039n04l-g ipp039n04l-g.pdf pdf_icon

7.1. Size:1541K infineon
ipp039n10n5.pdf pdf_icon

IPP039N10N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 100 V tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free