All MOSFET. IPP039N04L Datasheet

 

IPP039N04L MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP039N04L
   Marking Code: 039N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 59 nC
   trⓘ - Rise Time: 5.4 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039 Ohm
   Package: TO220

 IPP039N04L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP039N04L Datasheet (PDF)

 ..1. Size:246K  inchange semiconductor
 ipp039n04l.pdf

IPP039N04L IPP039N04L

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04LFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:264K  infineon
 ipp039n04lg ipb039n04lg.pdf

IPP039N04L IPP039N04L

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 0.2. Size:344K  infineon
 ipb039n04l-g ipp039n04l-g.pdf

IPP039N04L IPP039N04L

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 7.1. Size:1541K  infineon
 ipp039n10n5.pdf

IPP039N04L IPP039N04L

IPP039N10N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 100 VtabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

 7.2. Size:246K  inchange semiconductor
 ipp039n10n5.pdf

IPP039N04L IPP039N04L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP039N10N5IIPP039N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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