IPP041N04N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP041N04N datasheet

..1. Size:245K inchange semiconductor
ipp041n04n.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T

0.1. Size:688K infineon
ipb041n04n-g ipp041n04n-g ipp041n04ng ipb041n04ng.pdf pdf_icon

7.1. Size:508K infineon
ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf pdf_icon

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 m DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

7.2. Size:873K infineon
ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf pdf_icon

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM) DS(on) ID 120 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE