IPP041N04N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T

Type IPP041N04N GIPB041N04N G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 4.1mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

isc N-Channel MOSFET Transistor IPP041N12N3IIPP041N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(