IPP041N04N MOSFET Datasheet: N-Ch, 40V, 80A. Full specification with pinout and replacement list

IPP041N04N Specs and Replacement

Type Designator: IPP041N04N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 980 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO220

IPP041N04N substitution

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IPP041N04N datasheet

..1. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

0.1. Size:688K infineon
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7.1. Size:508K infineon
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IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 m DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to... See More ⇒

7.2. Size:873K infineon
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IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM) DS(on) ID 120 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE... See More ⇒