All MOSFET. IPP041N04N Datasheet

 

IPP041N04N MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP041N04N
   Marking Code: 041N04N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 94 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 42 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO220

 IPP041N04N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP041N04N Datasheet (PDF)

 ..1. Size:245K  inchange semiconductor
 ipp041n04n.pdf

IPP041N04N IPP041N04N

isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:688K  infineon
 ipb041n04n-g ipp041n04n-g ipp041n04ng ipb041n04ng.pdf

IPP041N04N IPP041N04N

Type IPP041N04N GIPB041N04N G 3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 4.1mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 7.1. Size:508K  infineon
 ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf

IPP041N04N IPP041N04N

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 120 VDS N-channel, normal levelR 3.8mDS(on),max (TO-263) Excellent gate charge x R product (FOM)DS(on)I 120 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

 7.2. Size:873K  infineon
 ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf

IPP041N04N IPP041N04N

IPI041N12N3 GIPP041N12N3 G IPB038N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM)DS(on)ID 120 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

 7.3. Size:245K  inchange semiconductor
 ipp041n12n3.pdf

IPP041N04N IPP041N04N

isc N-Channel MOSFET Transistor IPP041N12N3IIPP041N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.1mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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