IPP048N12N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPP048N12N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 1150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET IPP048N12N3

IPP048N12N3 Datasheet (PDF)

..1. Size:245K inchange semiconductor
ipp048n12n3.pdf

isc N-Channel MOSFET Transistor IPP048N12N3IIPP048N12N3FEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

0.1. Size:566K infineon
ipp048n12n3g.pdf

$$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 120 VDSR ( 492??6= ?@C>2= =6G6= 4.8 m - @? >2I R I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 100 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?EPGTO220 1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?

7.1. Size:734K infineon
ipb048n06lg ipp048n06lg5.pdf

IPP048N06L G IPB048N06L G Power-TransistorProduct SummaryFeaturesV D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?>R 4 4 m , ?> =1G ,' E5AB9?>P ( 381>>581>35=5>C

7.2. Size:565K infineon
ipp048n04n.pdf

pe $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 4 D R 3DE DH;E5:;@9 &( , - 8AC ,&), 4 m , A@ ?3I R ( BE;?;K76 E75:@A>A9J 8AC 5A@G7CE7CD 7 D1)R * F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@DR ' 5:3@@7> @AC?3> >7G7>R I57>>7@E 93E7 5:3C97 I BCA6F5E ( & D n)R .7CJ >AH A@ C7D;DE3@57 D n)R G3>3@5:7 E7DE76R )4 8C77 B>3E;@9 + A", 5A?B>;3@EType #))

7.3. Size:1926K cn vbsemi
ipp048n06.pdf

IPP048N06www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2002/9

7.4. Size:2138K cn vbsemi
ipp048n04.pdf

IPP048N04www.VBsemi.twN-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, c Qg (Typ.) 100 % Rg and UIS TestedRoHS0.0055 at VGS = 10 V 100COMPLIANT 40 130 nC0.0070 at VGS = 4.5 V 90APPLICATIONS Synchronous RectificationTO-220AB Power SuppliesDGSG D STop ViewN-Channel MOSFETABSOLUT

7.5. Size:246K inchange semiconductor
ipp048n04n.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP048N04NIIPP048N04NFEATURESStatic drain-source on-resistance:RDS(on) 4.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAX

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

Liste

Recientemente añadidas las descripciónes de los transistores: