IPP048N12N3 Todos los transistores

 ..1. Size:245K  inchange semiconductor
 ipp048n12n3.pdf

isc N-Channel MOSFET Transistor IPP048N12N3 IIPP048N12N3 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:566K  infineon
 ipp048n12n3g.pdf

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 7.1. Size:734K  infineon
 ipb048n06lg ipp048n06lg5.pdf

IPP048N06L G IPB048N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C

 7.2. Size:565K  infineon
 ipp048n04n.pdf

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 7.3. Size:1926K  cn vbsemi
 ipp048n06.pdf

IPP048N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/9

 7.4. Size:2138K  cn vbsemi
 ipp048n04.pdf

IPP048N04 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT

 7.5. Size:246K  inchange semiconductor
 ipp048n04n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP048N04N IIPP048N04N FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX