IPP048N12N3 PDF and Equivalents Search

 ..1. Size:245K  inchange semiconductor
 ipp048n12n3.pdf

isc N-Channel MOSFET Transistor IPP048N12N3 IIPP048N12N3 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T... See More ⇒

 0.1. Size:566K  infineon
 ipp048n12n3g.pdf

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 7.1. Size:734K  infineon
 ipb048n06lg ipp048n06lg5.pdf

IPP048N06L G IPB048N06L G Power-Transistor Product Summary Features V D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> R 4 4 m , ?> =1G ,' E5AB9?> P ( 381>>581>35=5>C ... See More ⇒

 7.2. Size:565K  infineon
 ipp048n04n.pdf

pe $$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 4 D R 3DE DH;E5 ;@9 &( , - 8AC ,&), 4 m , A@ ?3I R ( BE;?;K76 E75 @A>A9J 8AC 5A@G7CE7CD 7 D 1) R * F3>;8;76 355AC6;@9 EA $ 8AC E3C97E 3BB>;53E;A@D R ' 5 3@@7> @AC?3> >7G7> R I57>>7@E 93E7 5 3C97 I BCA6F5E ( & D n) R .7CJ >AH A@ C7D;DE3@57 D n) R G3>3@5 7 E7DE76 R )4 8C77 B>3E;@9 + A", 5A?B>;3@E Type #))... See More ⇒

 7.3. Size:1926K  cn vbsemi
 ipp048n06.pdf

IPP048N06 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2002/9... See More ⇒

 7.4. Size:2138K  cn vbsemi
 ipp048n04.pdf

IPP048N04 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0055 at VGS = 10 V 100 COMPLIANT 40 130 nC 0.0070 at VGS = 4.5 V 90 APPLICATIONS Synchronous Rectification TO-220AB Power Supplies D G S G D S Top View N-Channel MOSFET ABSOLUT... See More ⇒

 7.5. Size:246K  inchange semiconductor
 ipp048n04n.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP048N04N IIPP048N04N FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒