SFR9014 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFR9014

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO252

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SFR9014 datasheet

 ..1. Size:229K  fairchild semi
 sfu9014 sfr9014.pdf pdf_icon

SFR9014

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max

 ..2. Size:495K  samsung
 sfr9014.pdf pdf_icon

SFR9014

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -60V Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 0.1. Size:226K  fairchild semi
 sfr9014tf.pdf pdf_icon

SFR9014

SFR/U9014 Advanced Power MOSFET FEATURES BVDSS = -60 V n Avalanche Rugged Technology RDS(on) = 0.5 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -5.3 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -60V n Lower RDS(ON) 0.362 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Max

 9.1. Size:238K  fairchild semi
 sfu9034 sfr9034.pdf pdf_icon

SFR9014

SFR/U9034 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A(Max.) @ VDS = -60V Lower RDS(ON) 0.106 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absol

MOSTRAR MÁS

Otros transistores... SFP9630, SFP9634, SFP9640, SFP9644, SFP9Z14, SFP9Z24, SFP9Z34, SFR2955, IRFZ48N, SFR9024, SFR9034, SFR9110, SFR9120, SFR9130, SFR9210, SFR9214, SFR9220