IPP076N12N3 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPP076N12N3 datasheet

..1. Size:245K inchange semiconductor
ipp076n12n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP076N12N3 IIPP076N12N3 FEATURES Static drain-source on-resistance RDS(on) 7.6m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(

0.1. Size:571K infineon
ipp076n12n3g ipi076n12n3g.pdf pdf_icon

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0.2. Size:545K infineon
ipi076n12n3g ipp076n12n3g.pdf pdf_icon

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on)max 7.6 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

6.1. Size:1542K infineon
ipp076n15n5.pdf pdf_icon

IPP076N15N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 150 V tab Features Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Q rr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and