All MOSFET. IPP076N12N3 Datasheet

 

IPP076N12N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP076N12N3
   Marking Code: 076N12N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 188 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 100 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 76 nC
   Rise Time (tr): 50 nS
   Drain-Source Capacitance (Cd): 632 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0076 Ohm
   Package: TO220

 IPP076N12N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP076N12N3 Datasheet (PDF)

 ..1. Size:245K  inchange semiconductor
 ipp076n12n3.pdf

IPP076N12N3 IPP076N12N3

isc N-Channel MOSFET Transistor IPP076N12N3IIPP076N12N3FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(

 0.1. Size:571K  infineon
 ipp076n12n3g ipi076n12n3g.pdf

IPP076N12N3 IPP076N12N3

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 0.2. Size:545K  infineon
 ipi076n12n3g ipp076n12n3g.pdf

IPP076N12N3 IPP076N12N3

IPI076N12N3 G IPP076N12N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 120 V N-channel, normal levelRDS(on)max 7.6 mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target applicati

 6.1. Size:1542K  infineon
 ipp076n15n5.pdf

IPP076N12N3 IPP076N12N3

IPP076N15N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 150 VtabFeatures Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequency switching and

 6.2. Size:245K  inchange semiconductor
 ipp076n15n5.pdf

IPP076N12N3 IPP076N12N3

isc N-Channel MOSFET Transistor IPP076N15N5IIPP076N15N5FEATURESStatic drain-source on-resistance:RDS(on) 7.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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