IPP16CN10N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

www.DataSheet4U.comIPB16CN10N G IPD16CN10N GIPI16CN10N G IPP16CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 16mDS(on),max (TO252) Excellent gate charge x R product (FOM)DS(on)I 53 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified

isc N-Channel MOSFET Transistor IPP16CN10NIIPP16CN10NFEATURESStatic drain-source on-resistance:RDS(on) 16mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=D 1 Features D 1 m S ) 5:3@@7> @AD?3> >7H7> . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( DD n)S 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D7

%% # ! % (>.;?6?@%>EFeatures 1 D S ) 5:3@@7> >A9;5 >7H7> 1 7 m . A@ ?3J S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n) 4 DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A#. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@S $673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE D75F;8;53F;A@Type