IPP200N15N3 Todos los transistores

 

IPP200N15N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP200N15N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 214 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

IPP200N15N3 Datasheet (PDF)

 ..1. Size:993K  infineon
 ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf pdf_icon

IPP200N15N3

IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t

 ..2. Size:245K  inchange semiconductor
 ipp200n15n3.pdf pdf_icon

IPP200N15N3

isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 7.1. Size:758K  infineon
 ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf pdf_icon

IPP200N15N3

IPB200N25N3 G IPP200N25N3 GIPI200N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 20mW Excellent gate charge x R product (FOM)DS(on)ID 64 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application

 7.2. Size:244K  inchange semiconductor
 ipp200n25n3.pdf pdf_icon

IPP200N15N3

isc N-Channel MOSFET Transistor IPP200N25N3IIPP200N25N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: RSD046P05FRA | CS6N120P | KI2325DS

 

 
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