IPP200N15N3 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IPP200N15N3
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 214 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
Тип корпуса: TO-220
Аналог (замена) для IPP200N15N3
IPP200N15N3 Datasheet (PDF)
ipb200n15n3g ipd200n15n3g ipi200n15n3g ipp200n15n3g ipb200n15n3 ipd200n15n3 ipi200n15n3 ipp200n15n3.pdf
IPB200N15N3 G IPD200N15N3 GIPI200N15N3 G IPP200N15N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 150 V N-channel, normal levelRDS(on),max 20 mW Excellent gate charge x R product (FOM)DS(on)ID 50 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for t
ipp200n15n3.pdf
isc N-Channel MOSFET Transistor IPP200N15N3,IIPP200N15N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high frequency switching and sync. Rec.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
ipb200n25n3-g ipp200n25n3-g ipi200n25n3-g ipb200n25n3g ipp200n25n3g ipi200n25n3g.pdf
IPB200N25N3 G IPP200N25N3 GIPI200N25N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 20mW Excellent gate charge x R product (FOM)DS(on)ID 64 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
ipp200n25n3.pdf
isc N-Channel MOSFET Transistor IPP200N25N3IIPP200N25N3FEATURESStatic drain-source on-resistance:RDS(on) 20mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Ideal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET... IPP093N06N3 , IPP100N08N3 , IPP110N20N3 , IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IRF9540N , IPP200N25N3 , IPP320N20N3 , IPP530N15N3 , IPP600N25N3 , IPP60R060C7 , IPP60R080P7 , IPP60R099P7 , IPP60R120C7 .
History: P50B6EA | AP3R604GH | HM4423 | SQM50N04-4M1 | ME9435-G | IRF9392 | FTA02N65B
History: P50B6EA | AP3R604GH | HM4423 | SQM50N04-4M1 | ME9435-G | IRF9392 | FTA02N65B
Список транзисторов
Обновления
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