IPP320N20N3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP320N20N3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032 Ohm
Encapsulados: TO-220
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IPP320N20N3 datasheet
ipp320n20n3.pdf
isc N-Channel MOSFET Transistor IPP320N20N3 IIPP320N20N3 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 200 V DS N-channel, normal level R 32 m DS(on),max Excellent gate charge x R product (FOM) DS(on) I 34 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf
$ " " $$ " " $ " " TM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 200 V DS Q ' 381>>5?B=1
Otros transistores... IPP110N20N3 , IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , K4145 , IPP530N15N3 , IPP600N25N3 , IPP60R060C7 , IPP60R080P7 , IPP60R099P7 , IPP60R120C7 , IPP60R170CFD7 , IPP60R180P7 .
History: SGM0410S | AP92T12GP | ME95N03T | SWB060R65E7T | 4N65G-TF2-T
History: SGM0410S | AP92T12GP | ME95N03T | SWB060R65E7T | 4N65G-TF2-T
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