IPP320N20N3 Datasheet and Replacement
Type Designator: IPP320N20N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 136 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 34 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-220
IPP320N20N3 substitution
IPP320N20N3 Datasheet (PDF)
ipp320n20n3.pdf

isc N-Channel MOSFET Transistor IPP320N20N3IIPP320N20N3FEATURESStatic drain-source on-resistance:RDS(on) 32mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T
ipb320n20n3g ipp320n20n3g ipi320n20n3g ipp320n20n3g ipb320n20n3g ipi320n20n3g .pdf

IPB320N20N3 G IPP320N20N3 GIPI320N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 200 VDS N-channel, normal levelR 32mDS(on),max Excellent gate charge x R product (FOM)DS(on)I 34 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applica
ipp320n20n3g ipb320n20n3g ipi320n20n3g.pdf

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Datasheet: IPP110N20N3 , IPP111N15N3 , IPP114N12N3 , IPP12CN10L , IPP147N12N3 , IPP16CN10N , IPP200N15N3 , IPP200N25N3 , IRFB3607 , IPP530N15N3 , IPP600N25N3 , IPP60R060C7 , IPP60R080P7 , IPP60R099P7 , IPP60R120C7 , IPP60R170CFD7 , IPP60R180P7 .
History: MS65R400RF | J109 | AM1340N | STW56N65DM2 | J110 | IRCZ24PBF | SM6F24NSU
Keywords - IPP320N20N3 MOSFET datasheet
IPP320N20N3 cross reference
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History: MS65R400RF | J109 | AM1340N | STW56N65DM2 | J110 | IRCZ24PBF | SM6F24NSU



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