IRF250P224 Todos los transistores

 

IRF250P224 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF250P224
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 313 W
   Voltaje máximo drenador - fuente |Vds|: 250 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 128 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 135 nC
   Tiempo de subida (tr): 70 nS
   Conductancia de drenaje-sustrato (Cd): 1026 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: TO-247

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IRF250P224 Datasheet (PDF)

 ..1. Size:1062K  infineon
irf250p224.pdf

IRF250P224
IRF250P224

IRF250P224 MOSFET StrongIRFET V 250V D DSS RDS(on) typ. 9.0m GApplications max 12m UPS and Inverter applications SI 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits

 ..2. Size:241K  inchange semiconductor
irf250p224.pdf

IRF250P224
IRF250P224

isc N-Channel MOSFET Transistor IRF250P224IIRF250P224FEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

 5.1. Size:1059K  infineon
irf250p225.pdf

IRF250P224
IRF250P224

IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS RDS(on) typ. 18m Gmax 22m Applications SI 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC

 5.2. Size:242K  inchange semiconductor
irf250p225.pdf

IRF250P224
IRF250P224

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF250P225IIRF250P225FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

 8.1. Size:145K  international rectifier
2n6766 irf250.pdf

IRF250P224
IRF250P224

PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique

 8.2. Size:215K  samsung
irf250 irf251 irf252 irf253.pdf

IRF250P224
IRF250P224

 8.3. Size:23K  semelab
irf250smd.pdf

IRF250P224
IRF250P224

IRF250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

 8.4. Size:410K  nell
irf250b irf250c.pdf

IRF250P224
IRF250P224

RoHS IRF250 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET30A, 200VoltsDESCRIPTIOND The Nell IRF250 is a three-terminal silicon devicewith current conduction capability of 30A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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