IRF250P224 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF250P224
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 313 W
Предельно допустимое напряжение сток-исток |Uds|: 250 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 128 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 135 nC
Время нарастания (tr): 70 ns
Выходная емкость (Cd): 1026 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
Тип корпуса: TO-247
Аналог (замена) для IRF250P224
IRF250P224 Datasheet (PDF)
irf250p224.pdf
IRF250P224 MOSFET StrongIRFET V 250V D DSS RDS(on) typ. 9.0m GApplications max 12m UPS and Inverter applications SI 128A D Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits
irf250p224.pdf
isc N-Channel MOSFET Transistor IRF250P224IIRF250P224FEATURESStatic drain-source on-resistance:RDS(on)12mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
irf250p225.pdf
IRF250P225 IR MOSFET - StrongIRFET V 250V D DSS RDS(on) typ. 18m Gmax 22m Applications SI 69A D UPS and Inverter applications Half-bridge and full-bridge topologies D Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches S D Brushed and BLDC Motor drive applications G TO-247AC
irf250p225.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF250P225IIRF250P225FEATURESStatic drain-source on-resistance:RDS(on)22mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONOR-ring and redundant power switchesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
2n6766 irf250.pdf
PD - 90338EIRF250REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766HEXFETTRANSISTORS JANTXV2N6766THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF250 200V 0.085 30AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.TO-3The efficient geometry and unique
irf250smd.pdf
IRF250SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 200V ID(cont) 14A RDS(on) 0.100FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS
irf250b irf250c.pdf
RoHS IRF250 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET30A, 200VoltsDESCRIPTIOND The Nell IRF250 is a three-terminal silicon devicewith current conduction capability of 30A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G
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