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SPD30N03S2L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD30N03S2L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-252
 

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SPD30N03S2L datasheet

 ..1. Size:243K  inchange semiconductor
spd30n03s2l.pdf pdf_icon

SPD30N03S2L

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Superior thermal resistance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage ... See More ⇒

 0.1. Size:631K  infineon
spd30n03s2l-10 .pdf pdf_icon

SPD30N03S2L

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian... See More ⇒

 0.2. Size:682K  infineon
spd30n03s2l-20.pdf pdf_icon

SPD30N03S2L

G SPD30N03S2L-20 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 20 m Logic Level ID 30 A PG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Marking Type Package ... See More ⇒

 0.3. Size:586K  infineon
spd30n03s2l-10.pdf pdf_icon

SPD30N03S2L

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian... See More ⇒

Otros transistores... IRFS7534TRLPBF , ISTP16NF06 , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , IRF9640 , SPD50N03S2 , SUD70090E , 2N3380 , 2N3382 , 2N3384 , 2N3386 , 2N3970 , 2N3971 .

 

 
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