SPD30N03S2L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPD30N03S2L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 100 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TO-252
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SPD30N03S2L Datasheet (PDF)
spd30n03s2l.pdf
isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2LFEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
spd30n03s2l-10 .pdf
SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
spd30n03s2l-20.pdf
GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package
spd30n03s2l-10.pdf
SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian
spd30n03s2l-07.pdf
SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918