SPD30N03S2L - описание и поиск аналогов

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Superior thermal resistance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

G SPD30N03S2L-20 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 20 m Logic Level ID 30 A PG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Marking Type Package

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

SPD30N03S2L-07 G OptiMOS Power-Transistor Product Summary Feature VDS N-Channel 30 V Enhancement mode RDS(on) 6.7 m Logic Level ID 30 A PG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated . Pb-free lead plating; RoHS compliant Type Package Marking