Справочник MOSFET. SPD30N03S2L

 

SPD30N03S2L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: SPD30N03S2L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 100 W

Предельно допустимое напряжение сток-исток (Uds): 30 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Пороговое напряжение включения Ugs(th): 1.6 V

Максимально допустимый постоянный ток стока (Id): 30 A

Максимальная температура канала (Tj): 175 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.01 Ohm

Тип корпуса: TO-252

Аналог (замена) для SPD30N03S2L

 

 

SPD30N03S2L Datasheet (PDF)

1.1. spd30n03s2l-10.pdf Size:586K _update

SPD30N03S2L
SPD30N03S2L

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary • N-Channel VDS 30 V • Enhancement mode RDS(on) 10 mΩ • Logic Level ID 30 A PG-TO252-3 • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS complian

1.2. spd30n03s2l-07rev1.2.pdf Size:651K _infineon

SPD30N03S2L
SPD30N03S2L

SPD30N03S2L-07 G OptiMOS? Power-Transistor Product Summary Feature VDS N-Channel 30 V Enhancement mode RDS(on) 6.7 m? Logic Level ID 30 A PG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated . Pb-free lead plating; RoHS compliant Type Package Marking PG-TO252-3 SPD30N03S2L

 1.3. spd30n03s2l-20rev1.2.pdf Size:682K _infineon

SPD30N03S2L
SPD30N03S2L

G SPD30N03S2L-20 OptiMOS? Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 20 m? Logic Level ID 30 A PG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Marking Type Package SPD30N03S2L-20G PG- TO25

1.4. spd30n03s2l-10rev1.2.pdf Size:631K _infineon

SPD30N03S2L
SPD30N03S2L

SPD30N03S2L-10 G OptiMOS? Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m? Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Type Package Marking 2N

 1.5. spd30n03s2l.pdf Size:243K _inchange_semiconductor

SPD30N03S2L
SPD30N03S2L

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

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