2N4393DCSM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4393DCSM

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 35 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 35 V

|Id|ⓘ - Corriente continua de drenaje: 0.05 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm

Encapsulados: LCC2

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2N4393DCSM datasheet

 ..1. Size:49K  semelab
 2n4393dcsm.pdf pdf_icon

2N4393DCSM

2N4393DCSM SEME LAB SMALL SIGNAL DUAL N CHANNEL J FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 HERMETIC CERAMIC SURFACE MOUNT 1 4 A PACKAGE 0.23 6 5 rad. (0.009) CECC SC

 8.1. Size:59K  vishay
 2n4391 pn4391 sst4391 2n4392 pn4392 sst4392 2n4393 pn4393 sst4393.pdf pdf_icon

2N4393DCSM

2N/PN/SST4391 Series Vishay Siliconix N-Channel JFETs 2N4391 PN4391 SST4391 2N4392 PN4392 SST4392 2N4393 PN4393 SST4393 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N/PN/SST4391 4 to 10 30 5 4 2N/PN/SST4392 2 to 5 60 5 4 2N/PN/SST4393 0.5 to 3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 4391

 8.2. Size:106K  central
 2n4391 2n4392 2n4393.pdf pdf_icon

2N4393DCSM

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

 8.3. Size:229K  semelab
 2n4393c1a 2n4393c1b 2n4393c1c 2n4393c1d.pdf pdf_icon

2N4393DCSM

SILICON SMALL SIGNAL N-CHANNEL JFET 2N4393C1 Hermetic Surface Mounted Package. Designed For High Reliability and Space Applications. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise stated) VDS Drain Source Voltage 40V VGS Gate Source Voltage -40V VGD Gate Drain Voltage -40V IG Gate Current 50mA PD TA = 25 C

MOSTRAR MÁS

Otros transistores... 2N3972, 2N4342, 2N4343, 2N4360, 2N4393C1A, 2N4393C1B, 2N4393C1C, 2N4393C1D, 20N60, 2N4416A, 2N4416AC1A, 2N4416AC1B, 2N4416AC1C, 2N4416AC1D, 2N4416ACSM, 2N4416CSM, 2N4416DCSM