SFR9220 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SFR9220

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 70 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO252

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SFR9220 datasheet

 ..1. Size:257K  fairchild semi
 sfr9220 sfu9220.pdf pdf_icon

SFR9220

SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 1.111 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 ..2. Size:498K  samsung
 sfr9220.pdf pdf_icon

SFR9220

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Lower RDS(ON) 1.111 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 8.1. Size:269K  fairchild semi
 sfu9224 sfr9224.pdf pdf_icon

SFR9220

SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 1.65 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum

 8.2. Size:507K  samsung
 sfr9224.pdf pdf_icon

SFR9220

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Lower RDS(ON) 1.65 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

MOSTRAR MÁS

Otros transistores... SFR9014, SFR9024, SFR9034, SFR9110, SFR9120, SFR9130, SFR9210, SFR9214, EMB04N03H, SFR9224, SFS2955, SFS9510, SFS9520, SFS9530, SFS9540, SFS9610, SFS9614