Справочник MOSFET. SFR9220

 

SFR9220 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SFR9220
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 30 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 3.1 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 15 nC
   Время нарастания (tr): 22 ns
   Выходная емкость (Cd): 70 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SFR9220

 

 

SFR9220 Datasheet (PDF)

 ..1. Size:257K  fairchild semi
 sfr9220 sfu9220.pdf

SFR9220 SFR9220

SFR/U9220Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.1 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 ..2. Size:498K  samsung
 sfr9220.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

 8.1. Size:269K  fairchild semi
 sfu9224 sfr9224.pdf

SFR9220 SFR9220

SFR/U9224Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

 8.2. Size:507K  samsung
 sfr9224.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Charac

 9.1. Size:309K  fairchild semi
 sfu9214 sfr9214.pdf

SFR9220 SFR9220

SFR/U9214Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.53 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A(Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) 2112331. Gate 2. Drain 3. SourceAbs

 9.2. Size:256K  fairchild semi
 sfr9210 sfu9210.pdf

SFR9220 SFR9220

SFR/U9210Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

 9.3. Size:498K  samsung
 sfr9230.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -5.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.581 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.4. Size:494K  samsung
 sfr9210.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 2.084 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 9.5. Size:496K  samsung
 sfr9234.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.876 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

 9.6. Size:503K  samsung
 sfr9214.pdf

SFR9220 SFR9220

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.53 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 3.15 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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